The AP1110 is a 2.4~ 2.5 GHz linear, low current power amplifier fabricated with InGaP/ GaAs HBT process. Its ultra low current and small form factor make it an ideal general purpose power amplifier for 2.4GHz ISM band wireless systems requiring low current consumption and compact size components. The device also meets IEEE 802.11 b/g and Bluetooth Class 1 requirements.

The AP1110 is provided in a 2x2 mm, 8 pin DFN (Dual Flat No-Leads) package.

Frequency: 2.4~2.5 GHz

• Power Gain: typical 33.5dB / VCC=3.3V, Vref=2.85V
                        typical 32dB/ VCC=4.5V, Vref=2.85Vtyp
• P1dB: typical 29.5~30.5dBm @ CW signal / VCC=3.3V, Vref=2.85V
• Linear Power: VCC=3.3V, Vref=2.85V: typical 22dBm @ 2.5% EVM
                                                                      typical 24dBm @ 2.5% EVM
                VCC=4.5V, Vref= 2.85V:typical 24dBm @ 2.5% EVM

                                                                      typical 25dBm @ 3.0% EVM

                                                                      typical 28dBm @ 1 Mbps DSSS, meet spectrum mask spec.

Frequency: 2.4~2.5 GHz

• Power Gain: typical 32dB / VCC=5V, Vref=3.3V (same as VCC=3.3V Vref=3.15V)
• OP1dB: typical 33dBm @ CW signal / VCC=5V, Vref=3.3V
                 typical 29dBm@ CW signal / VCC= 3.3V, Vref=3.15V t
• Linear Power: VCC=5V, Vref=3.3V: 22~24dBm @ MCS8, HT40, 1.8% EVM

                                                                26~27dBm @ MCS7, HT20, 3% EVM

                                                                typical 28dBm @ MCS0, HT40, MASK 8

                            VCC=3.3V, Vref= 3.15V: 19.5~20.5dBm @ MCS8, HT40, 1.8% EVM

                                                                        22~23dBm @ MCS7, HT20, 3% EVM
                                                                        24~25dBm @ MCS0, HT40, MASK

Frequency: 2.4~2.5 GHz

• Power Gain: typical 32dB @ VCC=5V, Vref=3.15V
                        typical 31dB @ VCC=3.3V, Vref=3.2V
• OP1dB: typical 32dBm @ CW signal / VCC=5V, Vref=3.15V
                 typical 29dBm @ CW signal / VCC= 3.3V, Vref=3.2V
• Linear Power: VCC=5V, Vref=3.15V: typical 23dBm @ MCS8, HT40, 1.8% EVM
                                                                   typical 25.5dBm @ MCS7, HT40, 2.5% EVM
                                                                   typical 28.5dBm @ MCS0, HT20, MASK
                            VCC=3.3V, Vref= 3.2V: typical 21.5dBm @ MCS8, HT40, 1.8% EVM
                                                                     typical 22.5dBm @ MCS7, HT40, 2.5% EVM
                                                                     typical 25.5dBm @ MCS0, HT20, MASK

Frequency: 2.4~2.5 GHz (Vcc=3.3V, Vref=2.85V)

• Power Gain: 30~32 dB
• Linear Power: typical 24dBm＜3% EVM, with 64QAM modulation
                          typical 27dBm@ 1Mbps DSSS, meet spectrum mask spec.

Frequency: 2.11~2.17GHz (Vcc=3.3V, Vref=2.9V)

• Power Gain: 33~35 dB
• Linear Power: 20~21dBm@ ACLR±5MHz offset＜-45dBc
                          typical 18dBm@ ACLR±5MHz offset＜-50dBc

Broadband Design:1.9GHz~2.7GHz

     High Power and High Gain for WiMAX application

        2.3 ~ 2.7GHz @ Vcc = 3.3 V

• Power Gain= 34dB
• Linear Power = 24dBm, EVM≦3%
• Linear Power = 25dBm, WiMAX mask pass
• High Efficiency PAE: ~21% @ 25dBm

      Excellent linearity for W-CDMA repeater application

       1.9 ~ 2.2GHz @ Vcc = 3.3 V

• Linear Power = 15dBm @ 4FA
• ACPR = -45dBc, 5MHz offset
• ACPR = -45dBc, 5MHz offset
• ACPR = -45dBc, 5MHz offset

Broadband Design:1.9GHz~2.7GHz

     High Power and High Gain for Band 1/2//4/10

• Power Gain = 33dB
• Linear Power = 25dBm, -50 dBc ACPR @ ±5 MHz

      High Power and High Gain for Band 7

• Power Gain = 30dB
• Linear Power = 24dBm , -47 dBc ACPR @ ±5 MHz

The EPM2426 is a 2.4~ 2.5 GHz linear power amplifier fabricated using InGaP HBT technology. Input match, output match and a power detector are incorporated on-chip for ease of use. The device is intended for use in a wide range of applications like WLAN IEEE802.11b/g/n routers, boosters and any ISM band wireless systems that require high power and/or high linearity.

The EPM2426 is provided in a 4x4 mm, 16 pin QFN (Quad Flat No-leads) package.

Frequency: 2.4GHz~2.5GHz

• Power Gain: 33~35dB @ VCC=3.3V, Vref=2.85V
                         33~35dB @ VCC=4.5V, Vref=2.85Vt
• P1dB: 29~30dBm @ CW signal / VCC=3.3V, Vref=2.85V
              30~32dBm @ CW signal / VCC= 4.5V, Vref=2.85Vt
• Linear Power: VCC=3.3V, Vref=2.85V: 23.5~24.5dBm @ 54Mbps, 3% EVM, 64QAM modulation

                                                                      27~28dBm @ 1 Mbps DSSS, meet spectrum mask spec.

  Linear Power: VCC=4.5V, Vref=2.85V: 25.5~27dBm @ 54Mbps, 3% EVM, 64QAM modulation

                                                                      29.5~31dBm @ 1 Mbps DSSS, meet spectrum mask spec.

AP3015 is a 5~5.85GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBT Process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the users with the flexibility in system optimization. The device is intended for use in 802.11a 5GHz high gain applications.

The AP3015 is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Frequency: 5GHz~5.85 GHz

• Power Gain: typical 28dB @ VCC=3.3V, Vref=3V
• P1dB: typical 25 dBm @ VCC=3.3V, Vref=3V
• Linear Power: typical 19dBm @ 54Mbps, 3% EVM, 64QAM modulation

AP3015P is a 5~5.85GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBT process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the flexibility in optimizing the load match for 3.3V or 5V operation respectively. The device is intended for use in IEEE 802.11a/ac 5GHz high power applications.

The AP3015P is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Frequency: 5GHz~5.85 GHz

• Power Gain: typical 26dB @ VCC=3.3V, Vref=3.2V
• P1dB: typical 25 dBm @ VCC=3.3V, Vref=3.2V
• Linear Power: typical 15dBm @ 1.8% EVM, IEEE 802.11ac/ VCC=3.3V, Vref=3.2V

AP3015M is a 5~5.85GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBTprocess. Input/ output match and a power detector are incorporated on-chip for ease of use. The device is intended for use in 5GHz IEEE 802.11a/ac applications that require high power and small size components.

The AP3015M is provided in a 2.5x2.5 mm, 16 pin QFN (Quad Flat No-leads) package.

Frequency: 5GHz~5.85 GHz

• Power Gain: typical 30dB @ VCC=3.3V, Vref=2.9V
• P1dB: typical 26 dBm @ VCC=3.3V, Vref=2.9V
• Linear Power: typical 17dBm @ 1.8% EVM, IEEE 802.11ac signal/ VCC=3.3V, Vref=2.9V
                           typical 18dBm @ 2.5% EVM, IEEE 802.11a signal/ VCC=3.3V, Vref=2.9V

AP5402 is a 5~5.85GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated by InGaP HBT process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the flexibility in optimizing the system performance. The device is intended for use in 5GHz IEEE 802.11a/ac applications that require high power and high linearity components.

The AP5402 is provided in a 4x4 mm, 20 pin QFN (Quad Flat No-leads) package.

Frequency: 5GHz~5.85 GHz

• Power Gain: 27~32dB @ VCC=5V, Vref=2.95V (same as VCC=3.3V, Vref=3.05V)
• Linear Power: typical 17dBm @ 1.8% EVM, IEEE 802.11ac signal/ VCC=3.3V, Vref=2.9V
                           typical 25dBm@ VCC=3.3V, Vref=3.05V
• Linear Power: typical 23 dBm @ 3%EVM, VCC=5V, Vref=2.95V
                           typical 19 dBm @ 3%EVM, VCC=3.3V, Vref=3.05V

Frequency: 900 MHz

• Power Gain: 34 dB
• High PAE: 39% at 22dBm
• Harmonic: -34dBc at 22dBm,868MHz

                     -38dBc at 22dBm,900MHz

                     -43dBc at 22dBm,928MHzt

AP7293 is a multi-band linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated by InGaP HBTprocess. Input match, interstage match, and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the flexibility in optimizing the load match for three frequency bands- 450-460, 698-720, and 850-865MHz operation respectively. The device is intended for use in a broad range of applications such as WiMAX 700MHZ, LTE 700MHz, W-CDMA Band V Femtocell, and ISM Band 433.9MHz Remote Control devices.

The AP7293 is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Broadband Frequency: 450-460, 698-720, 850-865MHz

     High Power and High Gain for WiMAX applications

       698 - 720MHz @ Vcc = 5 V

• Power Gain ≧ 25dB
• Linear Power = 25dBm; EVM≦ 3%
• PAE: ~16% @ 25dBmcl

Frequency: 2.4~2.5 GHz (Vcc=3.3V, Vref=2.85V)

• Power Gain: 30~32 dB
• Linear Power: typical 24dBm＜3% EVM, with 64QAM modulation
                           typical 27dBm@ 1Mbps DSSS, meet spectrum mask spec.

Broadband Frequency: 1.9~2.7 GHz

       High Power and High Gain for WiMAX application

        2.3 ~ 2.7GHz @ Vcc = 3.3 V

• Power Gain = 34dB
• Linear Power = 24dBm; EVM ≦ 3%
• Linear Power = 25dBm; WiMAX mask pass
• High Efficiency PAE: ~21% @ 25dBm

       Excellent linearity for W-CDMA repeater application

       1.9 ~ 2.2GHz @ Vcc = 3.3 V

• Linear Power = 15dBm @ 4FA
• ACPR = -45dBc, 5MHz offset

Broadband Design:1.9GHz~2.7GHz

     High Power and High Gain for Band 1/2//4/10

• Power Gain = 33dB
• Linear Power = 25dBm, -50 dBc ACPR @ ±5 MHz

      High Power and High Gain for Band 7

• Power Gain = 30dB
• Linear Power = 24dBm , -47 dBc ACPR @ ±5 MHz

Frequency range: 3.3GHz~3.8 GHz

• Power Gain: typical 30dB @ VCC=5V, Vref=3V
• P1dB: 29~31dBm @ VCC=5V, Vref=3V
              26~28.5dBm@ VCC=3.3V, Vref=3Vt
• Linear Power: typical 24~25 dBm @ 2.5%EVM 3.3~3.8GHz, VCC=5V, Vref=3V
                           typical 20~21 dBm @ 2.5%EVM 3.3~3.8GHz, VCC=3.3V, Vref=3V