2.4-2.5GHz Series
AP1110
AP1047
AP1076
AP1053
AP1096
AP3013
AP3013F
EPM2426
EPM2428
5GHz Series
AP3015
AP3015P
AP3015M
AP5402
Sub-1GHz Series
AP1093
AP7293
1.9-2.7GHz 4G Series
AP1096
AP3013
AP3013F
3.3-3.8GHz 4G Series
AP3014
 
  功率放大器

2.4-2.5GHz Series
AP1110

The AP1110 is a 2.4~ 2.5 GHz linear, low current power amplifier fabricated with InGaP/ GaAs HBT process. Its ultra low current and small form factor make it an ideal general purpose power amplifier for 2.4GHz ISM band wireless systems requiring low current consumption and compact size components. The device also meets IEEE 802.11 b/g and Bluetooth Class 1 requirements.

The AP1110 is provided in a 2x2 mm, 8 pin DFN (Dual Flat No-Leads) package.

Key Features

WLAN Applications (VCC=2.2V, Vref=2.8V)

Bluetooth Applications (VCC=3.3V, Vref=2.85V)

  • Current: 85mA @ Pout=18.5dBm
  • Output Power: 18.5dBm@ 3%EVM
  • Gain: 26dB @ Pout=18dBm
  • Current: 95mA @ Pout=20dBm
                   50mA @ Pout=14dBmt
  • Gain: 26dB @ Pout=20dBm
 
AP1047

The AP1047 is a 2.4~ 2.5 GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBT process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the users with the flexibility in system optimization. The device is intended for use in WLAN IEEE802.11b/g/n applications. It also serves as a general purpose PA solution for ISM band wireless systems requiring high power and/or high linearity. 

The AP1047 is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 2.4~2.5 GHz

  • Power Gain: typical 33.5dB / VCC=3.3V, Vref=2.85V
                          typical 32dB/ VCC=4.5V, Vref=2.85Vtyp
  • P1dB: typical 29.5~30.5dBm @ CW signal / VCC=3.3V, Vref=2.85V
  • Linear Power: VCC=3.3V, Vref=2.85V: typical 22dBm @ 2.5% EVM
                                                                        typical 24dBm @ 2.5% EVM
                  VCC=4.5V, Vref= 2.85V:typical 24dBm @ 2.5% EVM
                                                                        typical 25dBm @ 3.0% EVM
                                                                        typical 28dBm @ 1 Mbps DSSS, meet spectrum mask spec.
 
AP1076

The AP1076 is a 2.4~ 2.5 GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBTprocess. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the flexibility the users with the flexibility in system optimization.The device is intended for use in WLAN IEEE802.11b/g/n/ac applications. It also serves as a general purpose PA solution for ISM band wireless systems requiring high power and/or high linearity.

The AP1076 is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 2.4~2.5 GHz

  • Power Gain: typical 32dB / VCC=5V, Vref=3.3V (same as VCC=3.3V Vref=3.15V)
  • OP1dB: typical 33dBm @ CW signal / VCC=5V, Vref=3.3V
                   typical 29dBm@ CW signal / VCC= 3.3V, Vref=3.15V t
  • Linear Power: VCC=5V, Vref=3.3V: 22~24dBm @ MCS8, HT40, 1.8% EVM
                                                                  26~27dBm @ MCS7, HT20, 3% EVM
                                                                  typical 28dBm @ MCS0, HT40, MASK 8
                              VCC=3.3V, Vref= 3.15V: 19.5~20.5dBm @ MCS8, HT40, 1.8% EVM
                                                                          22~23dBm @ MCS7, HT20, 3% EVM
                                                                          24~25dBm @ MCS0, HT40, MASK
 
AP1053

The AP1053 is a 2.4~ 2.5 GHz MMIC (Microwave Monolithic Integrated Circuit) linear power amplifier fabricated with InGaP HBT process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the users with the flexibility in system optimization. The device is intended for use in WLAN IEEE802.11b/g/n/ac applications. It also serves as a general purpose PA solution for ISM band wireless systems requiring high power and/or high linearity.

The AP1053 is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 2.4~2.5 GHz

  • Power Gain: typical 32dB @ VCC=5V, Vref=3.15V
                          typical 31dB @ VCC=3.3V, Vref=3.2V
  • OP1dB: typical 32dBm @ CW signal / VCC=5V, Vref=3.15V
                   typical 29dBm @ CW signal / VCC= 3.3V, Vref=3.2V
  • Linear Power: VCC=5V, Vref=3.15V: typical 23dBm @ MCS8, HT40, 1.8% EVM
                                                                     typical 25.5dBm @ MCS7, HT40, 2.5% EVM
                                                                     typical 28.5dBm @ MCS0, HT20, MASK
                              VCC=3.3V, Vref= 3.2V: typical 21.5dBm @ MCS8, HT40, 1.8% EVM
                                                                       typical 22.5dBm @ MCS7, HT40, 2.5% EVM
                                                                       typical 25.5dBm @ MCS0, HT20, MASK
 
AP1096

The AP1096 is a 2.1~ 2.5 GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated using InGaP HBT technology. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the users full flexibility in system optimization. The device is well suited for use in a broad range of applications requiring high power and high linearity, e.g. high power WLAN AP routers and W-CDMA Femtocell systems.

The AP1096 is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 2.4~2.5 GHz (Vcc=3.3V, Vref=2.85V)

  • Power Gain: 30~32 dB
  • Linear Power: typical 24dBm<3% EVM, with 64QAM modulation
                           typical 27dBm@ 1Mbps DSSS, meet spectrum mask spec.

Frequency: 2.11~2.17GHz (Vcc=3.3V, Vref=2.9V)

  • Power Gain: 33~35 dB
  • Linear Power: 20~21dBm@ ACLR±5MHz offset<-45dBc
                           typical 18dBm@ ACLR±5MHz offset≦-50dBc .
 
AP3013

The AP3013 is a 1.9~ 2.7 GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBT process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the users with the flexibility in system optimization. The device is well suited for a wide range of applications such as WLAN IEEE802.11b/g/n systems, IEEE802.16 systems, W-CDMA indoor repeater, ISM band outdoor repeater and W-CDMA band 1 Femtocell systems.

The AP3013 is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Broadband Frequency: 1.9~2.7 GHz

       High Power and High Gain for WiMAX application

        2.3 ~ 2.7GHz @ Vcc = 3.3 V

  • Power Gain = 34dB
  • Linear Power = 24dBm; EVM ≦ 3%
  • Linear Power = 25dBm; WiMAX mask pass
  • High Efficiency PAE: ~21% @ 25dBm

       Excellent linearity for W-CDMA repeater application

       1.9 ~ 2.2GHz @ Vcc = 3.3 V

  • Linear Power = 15dBm @ 4FA
  • ACPR = -45dBc, 5MHz offset
 
AP3013F

The AP3013F is a three-stage power amplifier MMIC (Microwave Monolithic Integrated Circuit) manufactured by InGaP/GaAs HBT process. The device is intended for use for LTE Femtocell and Customer Premises Equipment (CPE) applications. On chip input match and interstage match provide the ease of use, while an off chip output match provides the users great flexibility to optimize the performance at LTE bands 1,2,3,4,7,10,28,40,and 41 respectively. It’s excellent performance, small size and low cost make this device an ideal PA solution for LTE/WCDMA small cell infrastructure systems.

The AP3013F is provided in a 4x4 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Broadband Design:1.9GHz~2.7GHz

     High Power and High Gain for Band 1/2//4/10

  • Power Gain = 33dB
  • Linear Power = 25dBm, -50 dBc ACPR @ ±5 MHz

      High Power and High Gain for Band 7

  • Power Gain = 30dB
  • Linear Power = 24dBm , -47 dBc ACPR @ ±5 MHz
 
EPM2426

The EPM2426 is a 2.4~ 2.5 GHz linear power amplifier fabricated using InGaP HBT technology. Input match, output match and a power detector are incorporated on-chip for ease of use. The device is intended for use in a wide range of applications like WLAN IEEE802.11b/g/n routers, boosters and any ISM band wireless systems that require high power and/or high linearity.

The EPM2426 is provided in a 4x4 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 2.4GHz~2.5GHz

  • Power Gain: 33~35dB @ VCC=3.3V, Vref=2.85V
                           33~35dB @ VCC=4.5V, Vref=2.85Vt
  • P1dB: 29~30dBm @ CW signal / VCC=3.3V, Vref=2.85V
                30~32dBm @ CW signal / VCC= 4.5V, Vref=2.85Vt
  • Linear Power: VCC=3.3V, Vref=2.85V: 23.5~24.5dBm @ 54Mbps, 3% EVM, 64QAM modulation
                                                                        27~28dBm @ 1 Mbps DSSS, meet spectrum mask spec.
    Linear Power: VCC=4.5V, Vref=2.85V: 25.5~27dBm @ 54Mbps, 3% EVM, 64QAM modulation
                                                                        29.5~31dBm @ 1 Mbps DSSS, meet spectrum mask spec.
 
EPM2428

The EPM2428 is a 2.4~ 2.5 GHz linear power amplifier fabricated with InGaP HBT process. Input match, output match and a power detector are incorporated on-chip for ease of use. The device is intended for use in a wide range of applications like WLAN IEEE802.11b/g/n routers, boosters and any ISM band wireless systems that require high power and/or high linearity.

The EPM2428 is provided in a 4x4 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 2.4GHz~2.5GHz

  • Power Gain: 34~39dB @ VCC=4.5V, Vref=2.9±0.05V
  • P1dB: typical 32 dBm @ VCC=4.5V, Vref=2.9±0.05V
  • Linear Power: VCC=4.5V, Vref=2.9±0.05V: 27~28.5dBm @ 54Mbps, 3% EVM, 64QAM modulation
                                                                                30~31dBm @ 1 Mbps DSSS, meet spectrum mask spec.
 
5GHz Series
AP3015

AP3015 is a 5~5.85GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBT Process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the users with the flexibility in system optimization. The device is intended for use in 802.11a 5GHz high gain applications.

The AP3015 is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 5GHz~5.85 GHz

  • Power Gain: typical 28dB @ VCC=3.3V, Vref=3V
  • P1dB: typical 25 dBm @ VCC=3.3V, Vref=3V
  • Linear Power: typical 19dBm @ 54Mbps, 3% EVM, 64QAM modulation
 
AP3015P

AP3015P is a 5~5.85GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBT process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the flexibility in optimizing the load match for 3.3V or 5V operation respectively. The device is intended for use in IEEE 802.11a/ac 5GHz high power applications.

The AP3015P is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 5GHz~5.85 GHz

  • Power Gain: typical 26dB @ VCC=3.3V, Vref=3.2V
  • P1dB: typical 25 dBm @ VCC=3.3V, Vref=3.2V
  • Linear Power: typical 15dBm @ 1.8% EVM, IEEE 802.11ac/ VCC=3.3V, Vref=3.2V
 
AP3015M

AP3015M is a 5~5.85GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBTprocess. Input/ output match and a power detector are incorporated on-chip for ease of use. The device is intended for use in 5GHz IEEE 802.11a/ac applications that require high power and small size components.

The AP3015M is provided in a 2.5x2.5 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 5GHz~5.85 GHz

  • Power Gain: typical 30dB @ VCC=3.3V, Vref=2.9V
  • P1dB: typical 26 dBm @ VCC=3.3V, Vref=2.9V
  • Linear Power: typical 17dBm @ 1.8% EVM, IEEE 802.11ac signal/ VCC=3.3V, Vref=2.9V
                             typical 18dBm @ 2.5% EVM, IEEE 802.11a signal/ VCC=3.3V, Vref=2.9V
 
AP5402

AP5402 is a 5~5.85GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated by InGaP HBT process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the flexibility in optimizing the system performance. The device is intended for use in 5GHz IEEE 802.11a/ac applications that require high power and high linearity components.

The AP5402 is provided in a 4x4 mm, 20 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 5GHz~5.85 GHz

  • Power Gain: 27~32dB @ VCC=5V, Vref=2.95V (same as VCC=3.3V, Vref=3.05V)
  • Linear Power: typical 17dBm @ 1.8% EVM, IEEE 802.11ac signal/ VCC=3.3V, Vref=2.9V
                             typical 25dBm@ VCC=3.3V, Vref=3.05V
  • Linear Power: typical 23 dBm @ 3%EVM, VCC=5V, Vref=2.95V
                             typical 19 dBm @ 3%EVM, VCC=3.3V, Vref=3.05V
 
Sub-1GHz Series
AP1093

The AP1093 is a 868/915 M Hz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBT process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the users with the flexibility in system optimization. The device is intended for use in a broad range of applications such as Zigbee, and ISM Band Remote Control devices.

The AP1093 is provided in a 3x 3 mm , 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 900 MHz

  • Power Gain: 34 dB
  • High PAE: 39% at 22dBm
  • Harmonic: -34dBc at 22dBm,868MHz
                       -38dBc at 22dBm,900MHz
                       -43dBc at 22dBm,928MHzt
 
AP7293

AP7293 is a multi-band linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated by InGaP HBTprocess. Input match, interstage match, and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the flexibility in optimizing the load match for three frequency bands- 450-460, 698-720, and 850-865MHz operation respectively. The device is intended for use in a broad range of applications such as WiMAX 700MHZ, LTE 700MHz, W-CDMA Band V Femtocell, and ISM Band 433.9MHz Remote Control devices.

The AP7293 is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Broadband Frequency: 450-460, 698-720, 850-865MHz

     High Power and High Gain for WiMAX applications

       698 - 720MHz @ Vcc = 5 V

  • Power Gain ≧ 25dB
  • Linear Power = 25dBm; EVM≦ 3%
  • PAE: ~16% @ 25dBmcl
 
1.9-2.7GHz Series
AP1096

The AP1096 is a 2.1~ 2.5 GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated using InGaP HBT technology. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the users full flexibility in system optimization. The device is well suited for use in a broad range of applications requiring high power and high linearity, e.g. high power WLAN AP routers and W-CDMA Femtocell systems.

The AP1096 is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency: 2.4~2.5 GHz (Vcc=3.3V, Vref=2.85V)

  • Power Gain: 30~32 dB
  • Linear Power: typical 24dBm<3% EVM, with 64QAM modulation
                             typical 27dBm@ 1Mbps DSSS, meet spectrum mask spec.

Frequency: 2.11~2.17GHz (Vcc=3.3V, Vref=2.9V)

  • Power Gain: 33~35 dB
  • Linear Power: 20~21dBm@ ACLR±5MHz offset<-45dBc
                             typical 18dBm@ ACLR±5MHz offset≦-50dBc .
 
AP3013

The AP3013 is a 1.9~ 2.7 GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated with InGaP HBT process. Input match and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the users with the flexibility in system optimization. The device is well suited for a wide range of applications such as WLAN IEEE802.11b/g/n systems, IEEE802.16 systems, W-CDMA indoor repeater, ISM band outdoor repeater and W-CDMA band 1 Femtocell systems.

The AP3013 is provided in a 3x3 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Broadband Frequency: 1.9~2.7 GHz

       High Power and High Gain for WiMAX application

        2.3 ~ 2.7GHz @ Vcc = 3.3 V

  • Power Gain = 34dB
  • Linear Power = 24dBm; EVM ≦ 3%
  • Linear Power = 25dBm; WiMAX mask pass
  • High Efficiency PAE: ~21% @ 25dBm

       Excellent linearity for W-CDMA repeater application

       1.9 ~ 2.2GHz @ Vcc = 3.3 V

  • Linear Power = 15dBm @ 4FA
  • ACPR = -45dBc, 5MHz offset
 
AP3013F

The AP3013F is a three-stage power amplifier MMIC (Microwave Monolithic Integrated Circuit) manufactured by InGaP/GaAs HBT process. The device is intended for use for LTE Femtocell and Customer Premises Equipment (CPE) applications. On chip input match and interstage match provide the ease of use, while an off chip output match provides the users great flexibility to optimize the performance at LTE bands 1,2,3,4,7,10,28,40,and 41 respectively. It’s excellent performance, small size and low cost make this device an ideal PA solution for LTE/WCDMA small cell infrastructure systems.

The AP3013F is provided in a 4x4 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Broadband Design:1.9GHz~2.7GHz

     High Power and High Gain for Band 1/2//4/10

  • Power Gain = 33dB
  • Linear Power = 25dBm, -50 dBc ACPR @ ±5 MHz

      High Power and High Gain for Band 7

  • Power Gain = 30dB
  • Linear Power = 24dBm , -47 dBc ACPR @ ±5 MHz
 
AP3014

AP3014 is a 3.3~3.8GHz linear power amplifier MMIC (Microwave Monolithic Integrated Circuit) fabricated by InGaP HBT technology. Input match, interstage match, and a power detector are incorporated on-chip for ease of use, while external output match is used to provide the flexibility in system optimization. The device is intended for use in IEEE 802.16d/ e super high power applications.

The AP3014 is provided in a 4x4 mm, 16 pin QFN (Quad Flat No-leads) package.

Key Features

Frequency range: 3.3GHz~3.8 GHz

  • Power Gain: typical 30dB @ VCC=5V, Vref=3V
  • P1dB: 29~31dBm @ VCC=5V, Vref=3V
                26~28.5dBm@ VCC=3.3V, Vref=3Vt
  • Linear Power: typical 24~25 dBm @ 2.5%EVM 3.3~3.8GHz, VCC=5V, Vref=3V
                             typical 20~21 dBm @ 2.5%EVM 3.3~3.8GHz, VCC=3.3V, Vref=3V